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| SUD50N04-06H Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.006 @ VGS = 10 V ID (A)c Qg (Typ) 95 109 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D High Threshold Voltage At High Temperature APPLICATIONS D Automotive Such As: - High-Side Switch - Motor Drives - 12-V Battery TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N04-06H--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current (Single Pulse) Repetitive Avalanche Energy (Single Pulse)a Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 40 "20 109c 77c 100 50 125 136 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb J ti t A bi t Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit _C/W C/W Notes: a. Duty cycle v 1%. b. Surface mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72860 S-42058--Rev. B, 15-Nov-04 www.vishay.com 1 SUD50N04-06H Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 40 V, VGS = 0 V, TJ = 125_C VDS = 40 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VDS = 15 V, ID = 15 A 20 50 50 0.0049 0.006 0.009 0.012 S W 40 3.4 5.0 "100 1 50 150 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 20 V, RL = 0.4 W ID ] 50 A, VGEN = 10 V, Rg = 2.5 W f = 1.0 MHz VDS = 20 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 6700 600 320 95 37 21 1.7 20 95 50 12 30 145 75 20 ns W nC pF Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/ms 0.90 40 50 100 1.50 60 A V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72860 S-42058--Rev. B, 15-Nov-04 SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 7 V 80 I D - Drain Current (A) 6V I D - Drain Current (A) 80 100 Transfer Characteristics 60 60 40 40 TC = 125_C 20 25_C -55_C 0 20 5V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance 160 TC = -55_C 120 125_C 80 25_C r DS(on) - On-Resistance ( ) 0.010 On-Resistance vs. Drain Current 0.008 g fs - Transconductance (S) 0.006 VGS = 10 V 0.004 40 0.002 0 0 10 20 30 40 50 60 VGS - Gate-to-Source Voltage (V) 8400 0.000 0 20 40 60 80 100 ID - Drain Current (A) 20 VDS = 20 V ID = 50 A Capacitance Ciss V GS - Gate-to-Source Voltage (V) Gate Charge C - Capacitance (pF) 6300 16 12 4200 8 2100 Coss 0 0 Crss 5 10 15 20 25 30 35 40 4 0 0 25 50 75 100 125 150 175 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72860 S-42058--Rev. B, 15-Nov-04 www.vishay.com 3 SUD50N04-06H Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) Source-Drain Diode Forward Voltage 100 1.7 rDS(on) - On-Resiistance (Normalized) TJ = 150_C TJ = 25_C 10 1.4 1.1 0.8 0.5 -50 -25 0 25 50 75 100 125 150 175 1 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72860 S-42058--Rev. B, 15-Nov-04 SUD50N04-06H Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 125 Safe Operating Area 1000 *Limited by rDS(on) 100 I D - Drain Current (A) 10 ms 100 ms 100 I D - Drain Current (A) 75 10 1 ms 10 ms dc, 100 ms 50 Limited By Package 25 1 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72860. Document Number: 72860 S-42058--Rev. B, 15-Nov-04 www.vishay.com 5 |
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